| 摘要 |
PURPOSE:To obtain a CCD having high scanning frequency with decreased scanning impedance by forming the second metallic electrode with an SiO2 film and an Si3N4 film by a self-aligning method when forming the second electrode superposed on the first electrode at the end between the first electrodes made of polycrystalline silicon. CONSTITUTION:A thin gate insulating film 2 is covered on a P type Si substrate 1, a polycrystalline Si layer 10 becoming a part of a gate electrode is thereafter accumulated thereon, and a laminated mask made of an SiO2 film 11 and an Si3N4 film 12 is formed at the prescribed interval thereon. Then, a photoresist layer 13 extending in the prescribed length is formed on the film 12, with the layer 13 as a mask it is selectively etched, and the layer 10 is retained as the first strip electrode 4. Thereafter, the layer 13 is removed, the exposed surface of the electrode 4 is converted to an SiO2 film 14, the laminated films of the films 12, 11 are removed, and the second aluminum electrode disposed at one end on the film 14 and at the other end on the laminated film removed part is covered on the film 2 exposed between the electrodes 4. |
