| 摘要 |
<p>PURPOSE:To enable the control of a large current by employing a composite electrode material made of thick copper foil of the thickness secured to a resin supporting film when the electrode is mounted on an electrode film formed on the surface of a semiconductor substrate. CONSTITUTION:An SiO film 9 is covered on the surface of a silicon semiconductor substrate 1 having a p-n-p-n layer laminated structure, a nickel gate electrode film 6 and a silver cathode electrode film 7 are formed on the uppermost layer of the substrate exposed with holes, and a chromium anode electrode film 8 is covered on the back surface of the substrate 1. When electrodes of thick copper foils are mounted at the electrodes 6, 7 of the upper layer, they are secured as electrodes to polyimide resin insulating supporting plate 11 while respectively forming the gate copper foil 62 and cathode copper foil 72 in the prescribed. Thereafter, the electrode film 6 and copper foil 62 and the electrode 7 and copper foil 72 are respectively secured with solder 20, the resistances of the thin electrode films 6, 7 are lowered by bonding the copper foils 62, 72, thereby increasing the operating current to the substrate 1.</p> |
