发明名称 MOS TRANSISTOR CIRCUIT OF HIGH DIELECTRIC STRENGTH
摘要 PURPOSE:To use a circuit in a voltage higher than a breakdown voltage, by connecting two MOS transistors in series and by connecting both substrates to the source of one MOS transistor and by applying a voltage higher than the threshold voltage to the gate of the other. CONSTITUTION:A voltage -VP is applied to the plate of a fluorescent display tube 1, and a drain D1 of a MOS transistor (TR)Q1 is connected to this plate, and the source of the TRQ1 is connected to the drain of a MOSTRQ2, and substrates of TRs Q1 and Q2 are connected to the earth through the source of the TRQ2. A voltage higher than the threshold is applied to the gate of the TRQ1, and a voltage lower than the threshold is applied to the gate of the TRQ2 when an input signal does not come. When a voltage higher than the threshold is applied to the gate of the TRQ1. TRs Q1 and Q2 become low-resistance regions together to supply a plate current iP of the display tube 1. When a voltage lower than the threshold is applied to the gate of the TRQ2 the voltage -VP is dividing and applied to both TRs, and the circuit is operated normally even if the voltage VP is higher than the breakdown voltage.
申请公布号 JPS5778219(A) 申请公布日期 1982.05.15
申请号 JP19800148006 申请日期 1980.10.22
申请人 NIPPON DENKI KK 发明人 SHINRIYOU TAKAO
分类号 H03K17/10;H03K17/73 主分类号 H03K17/10
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