| 摘要 |
PURPOSE:To reduce the size of a semiconductor information transmission and memory device by adding an impurity forming a deep energy level on the surface of a semiconductor substrate contacted with an insulating layer and collecting and storing desired electrode position with the deep level transferred carrier, thereby eliminating a peripheral circuit, e.g., regenerative circuit. CONSTITUTION:A plurality of electrodes 5 are planarly disposed via an insulating layer 2 on one surface of a semiconductor region 1 of an MIS structure, and an electrode 4 functioning a ground is covered on the overall surface of the other surface. One carrier injecting electrode 3 is formed at the ends of a plurality of electrodes 5-1-5-n, 5<1>-1-5<1>-n, 5<2>-1-5<2>-n, 5<3>-1-5<3>-n, 5<4>-1-5<4>-n, 5<n>-1-5<n>-n. In this structure, an impurity forming deep collecting level, e.g., Ni, S, Ag, Au or the like is diffused or ion injected on the surface layer contacted with the layer 2 of the substrate 1. In the structure thus constructed, the prescribed voltage is applied to a plurality of electrodes 5. Then, carriers transferred from the adjacent electrode is collected by the deep level, thereby enabling desired information transmission and storage. |
