| 摘要 |
PURPOSE:To prevent the reliability from being adversely affected even if a title device is made fine by a method wherein the n-type base layer includes multiple quantum well layers which are provided with a disordered region for defining a light emitting region. CONSTITUTION:In a pnpn photo thyristor including a composite structure band wherein a composite layer of a p-type base layer 12 consisting of Al0.2Ga0.8As of a predetermined forbidden band width and an n-type base layer (including n-type Al0.2Ga0.8As layers 13-1, 13-2) is sandwiched between an n-type cathode layer 11 and a p-type anode layer 17 the forbidden band widths of which are broader than those, the n-type base layer has multiple quantum well layers 16 provided with a disordered region for defining a light emitting region. That is, this disordered region is a section where the multiple quantum well layers 16 and a Zn diffusion region 19 are overlapped. Since the multiple quantum well layers have the defined light emitting region in the disordered region and this light emitting region is not exposed, it is not exposed to the external air, whereby a highly reliable and fine pnpn photo thyristor is obtained. |
