| 摘要 |
PURPOSE:To avoid generation of micro crack in a region where a wiring polycrystalline silicon and a metal wiring cross each other holding on insulating film in between by a method wherein an insulating film between the polycrystalline silicon and a substrate is identical with a gate insulating film of MOSFET. CONSTITUTION:A field oxide film 11 of a region where a wiring polycrystalline silicon and an aluminum wiring cross each other is removed and an oxide film 12 is formed when a gate oxide film of MOSFET is formed. Then after the polycrystalline silicon wiring 8 is formed and a source region and a drain region of MOSFET are formed, a layer insulating layer 14 and the aluminum wiring 9 are formed. With above method, as the crossing region is not formed on the field oxide film 11, difference in level is not produced in the crossing region even when the field oxide film 11 is etched in a forming process of the source and the drain region, so that generation of micro crack in the wiring can be avoided. |
