| 摘要 |
PURPOSE:To improve the degree of integration of an integrated circuit by forming a trapezoid polysilicon layer, the surface thereof is oxidized, under the first wiring layer of section where the first wiring layer and the second wiring layer separated by a layer insulating layer contact. CONSTITUTION:When the first wiring layers 1, 11 are shaped onto a lower layer insulating layer 4 formed onto a semiconductor substrate not shown and the second wiring layer 21 and a cover glass layer 24 are molded through an upper layer phosphours-silicon-glass layer 14, the trapezoid polysilicon layer 6, the surface thereof has an oxide film 6', is formed under the section where the first wiring layer 1 and the second wiring layer 21 contact. Accordingly, the second wiring layer can be shaped positively even when the positions of through-holes for contact are displaced, and the degree of integration is also improved because the contact forming section need not be magnified and molded. |
