| 摘要 |
PURPOSE:To form the resin film which protects the stored content of a MOS memory from trouble due to gamma-rays by a method wherein a frame in resin is shaped to the surface of a semiconductor substrate, and a solution of a high molecular material is dropped into the frame, and cured. CONSTITUTION:The frame 3 in polyimide is pasted surrounding a region 4 to be protected of the surface of the semiconductor chip 1. The polyimide solution 5 only for coating the whole surface in the frame in necessary thickness is dropped into the frame, and the surface is coated with a solution layer 5' in necessary thickness. A solvent is volatilized through heat treatment, and a polyimide film is shaped. |
