| 摘要 |
PURPOSE:To prevent damage of a semiconductor substrate caused by plasma particles by arranging a metal shielding plate over the semiconductor substrate place in a processing chamber in a microwave oven, thereby shielding the microwave power. CONSTITUTION:The quartz processing chamber 2 which is covered by a quartz covering body 2A is arranged in the microwave oven 1, and the semiconductor wafer 3 to be processed is placed on a table 7. Freon gas is regulated by a valve 4A and introduced into the processing chamber 2 through an inlet port 4 and discharged from an outlet 5. The microwave power of e.g. 2,45GH2 and 500W is supplied through a supply hole 6 from a microwave generator 6A. The pressure in the oven 1 is maintained at 0.1Torr. The approximately square microwave shielding plate 8 of e.g. Al with a thickness of 0.1-1.0mm. is arranged under the plasma generating area (hatched part) and over the wafer 3. Said shielding plate is arranged in parallel with the table 7, with the distance of 10-30mm. from the surface of the table 7. |
