| 摘要 |
PURPOSE:To prevent the generation of a crystal defect by successively laminating a thermal oxide film, a CVD oxide film and a Si nitride film on the surface of a Si substrate and oxidizing the surface of the Si substrate of a section where there is no thermal oxide film. CONSTITUTION:The thermal oxide film 2, the CVD oxide film 6 and the Si3N4 film 3 are laminated successively on the Si substrate 1, and patterned, and a separation oxide film 4 is formed by thermally oxidizing an exposed surface of the Si substrate. Accordingly, thermal stress resulting from the Si3N4 layer when the films are selectively oxidized can be relaxed effectively, and the generation of the crystal defect can be prevented. |
