| 摘要 |
PURPOSE:To obtain the excellent substrate without degradation in mobility by removing the concave and convex parts of the entire surface of non-single crystal film on the semiconductor substrate caused by a laser spot by mechanical polishing or ion etching and flattening the surface. CONSTITUTION:A silicon oxide film 3 is formed on the surface of the single crystal silicon substrate 1, and a window part 2 is provided therein. Non-single crystal silicon 4 is formed on the surface of a film 3. Annealing is performed by the argon pulse laser spot 5 so that lines are overlapped by about 50%, respectively. Fine corundum powder 6 is placed on the surface of the non-single crystal silicon 4 which is melted by annealing and on which the concave and convex parts 4a and generated. Water is dropped on the surface and the polishing is performed so as to obtain film thickness of non-single crystal silicon 4 of about 1mum. In this method, the surface of the substrate is flattened highly accurately and the degradation of the mobility is not caused. Said flattening can be accomplished by the reactive ion etching. |
