| 摘要 |
PURPOSE:To form a highly accurate pattern without any unevenness by performing a sputtering through the first mask with openings corresponding to a desired pattern, placed on a base plate, and the second mask with an opening of large diameter than that of the openings of the first mask, placed on the first mask. CONSTITUTION:The first mask 2 with plural openings 3 corresponding to a desired pattern is placed on a base plate 1, and then the second mask 4 with an opening 5 covering all of the openings 3 of the first mask 2 is placed on the first mask 2. When performing sputtering under such a condition, a sputtered film is formed in a region on the base plate 1, corresponding to the openings 3 of the first mask 2. Thus, since the first mask 2 undergoes no direct irradiation of radiant heat from a sputtering gate 6 by the second mask 4 between the base plate 1 and the sputtering gate 6 and also secondary atoms from the sputtering gate 6 is interrupted by the second mask 4, no warping occurs in the base plate 1. |
