发明名称 Structured chemically reducing metal deposit
摘要 The process involves the deposition of additively laser-structured metal layers from chemically reducing baths on electrically nonconducting or semiconducting surfaces. The novel process does not employ a mask and makes it possible to apply, in particular, even very narrow metal tracks. In addition, the process operates with extremely high economy of material. It is characterised in that all the known metallisation baths are used at room temperature and the required working temperature is produced with the aid of a suitable laser only at the point on the substrate which is to be coated. Metal tracks are produced by moving laser and substrate relative to one another. After suitably pretreating the substrates (cleaning, degreasing, etching) they are activated in the usual way and placed in a chemically reducing metallisation bath with the side to be coated upwards. The desired structure is then irradiated or heated with the laser, and the substrate is removed from the bath, rinsed and dried. Application in electronics and allied fields.
申请公布号 DE3139168(A1) 申请公布日期 1982.05.13
申请号 DE19813139168 申请日期 1981.10.02
申请人 INGENIEURHOCHSCHULE MITTWEIDA 发明人 GIERTH,LOTHAR,DR.RER.NAT.;RICHTER,FALK,DIPL.-CHEM.;GESEMANN,RENATE,PROF.DR.SC.TECHN.;BROULIK,RENATE;KOEHLER,THOMAS,DIPL.-ING.
分类号 C23C18/16;H05K3/18;(IPC1-7):C23C3/02 主分类号 C23C18/16
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