| 摘要 |
PURPOSE:To accelerate the speed of film formation as well as make easier the control of the compositional ratio of the film by a method in which the cooling effciency of target is partially lowered so as to raise the temperature of the corresponding place where the target is vaporized for heat vapor deposition, and sputtering is made for the remaining place. CONSTITUTION:Ar gas is introduced into a vacuum tank, and a high frequency or DC voltage is applied to targets 2A and 2B to cause glow discharge to occur. The target 2A held by a holder 1A is attacked by Ar gas while being cooled in a water- cooling pipeline for performing sputtering. On the other hand, the target 2B held by a holder 1B is attacked by Ar gas without cooling to raise its temperature to a temperature at which the material of the target 2B is vaporized. Thus, film is formed on the surface of a base plate provided above the targets 2A and 2B by sputtering and heat vapor deposition. |
