| 摘要 |
<p>A process for the preparation of thin film transistors and thin film transistor arrays as described wherein, in a single pump-down, the semiconductive pad (21), the source electrode (23, 25), the drain electrode (23, 25) and an insulating layer (27, 29) over the source electrode, drain electrode, and the exposed portion of the semiconductive layer is applied in a single vacuum pump-down by the deposition of the various materials through a shadow mask having openings therein of a size equal to the size of the semiconductive pad to be deposited. The mask is first utilized to deposit the semiconductive pad then moved in a direction of 180° with respect to the first direction a distance of approximately twice that of the original motion and the second conductor applied by deposition through the openings in the mask. Finally, the remaining portion of the thin film transistors are completed by conventional technology.</p> |
