| 摘要 |
PURPOSE:To reduce a dicing area by forming monitoring parts beneath wire bonding pads of a source and a drain of the main body of a junction type FET, thereby eliminating the area for the monitoring parts. CONSTITUTION:The monitoring parts 2 are formed beneath the source wire bonding pad 9 and the drain wire bonding pad 10 of the main body 1 of the junction type FET via an SiO2 film 8. In the manufacture of the junction type FET, the monitoring parts 2 are required for controlling the characteristics of the main body, but not required after the completion of the characteristic control. Since the pads 9 and 10 are formed at the final manufacturing process of the FET, they are not yet formed when the monitoring parts 2 are used for the characteristic control of the FET. Therefore the FET can be formed without any obstacles. In this method, the dimension of the dicing can be reduced by the area of the monitoring parts 2. Since the capacity is largely reduced, the high frequency characteristics can be improved. |
