发明名称 MANUFACTURE DEVICE FOR THIN FILM
摘要 PURPOSE:To obtain a thin film having superior characteristic without receiving adverse influence from the circumference by a method wherein magnetic field is made to be generated as to apply necessary magnetic field only to space between electrodes, and not to apply magnetic field to the unnecessary part. CONSTITUTION:SiH3 is introduced 21, and is discharged 20, a substrate is supported on the electrode 23 and is heated with a heater 25. Electric field of high-frequency or DC is applied to the electrodes 23, 24 from the outside through metal bars 26, 27 insulated by a gap 28 to perform plasma discharge decomposition. Size of the gap 28 is selected at the necessary minimum considering resistance of magnetic path of an electromagnet 29. By this constitution, discharge decomposition is performed forming magnetic field only in space between the electrodes to reduce accumulation of decomposed material to the undesired part, and the thin film having superior characteristic can be obtained. Size of the electromagnet 29 is not controlled by size of a reaction tube 22, and is decided by necessitated magnetic field intensity, and the electromagnet can be small in size.
申请公布号 JPS5775422(A) 申请公布日期 1982.05.12
申请号 JP19800151835 申请日期 1980.10.28
申请人 MATSUSHITA DENKI SANGYO KK 发明人 KITAGAWA MASATOSHI;OONO MASAHARU;ISHIHARA SHINICHIROU;MORI KOUSHIROU;HIRAO TAKASHI;NAGATA SEIICHI
分类号 H01L21/205;C23C16/50;C30B25/02;H01L31/04 主分类号 H01L21/205
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