| 摘要 |
PURPOSE:To reduce the configuration of an effective emitter region without increasing manufacturing processes by horizontally shifting the electrode pattern in an emitter region with respect to a semiconductor substrate. CONSTITUTION:An N type epitaxial layer 13 is provided on the P type Si substrate 12, a P type separating layer 14 is formed, and the island shaped regions of the epitaxial layer 13 are obtained. A base region 14 is formed in one of the island regions. A heat oxide film 16 is provided at the part other than at least the region 14 and the part which is to become collecting region in a collector region. In forming a mask pattern for forming an emitter, an etching mask for forming the mask pattern is shifted to an oxide film 16'. One side of the effective emitter region 23 becomes smaller than the value a-b, where a is the electrode pattern in the emitter regio and b is the shifted distance. Therefore, the configuration of the region 23 can be reduced. As a result, the emitter junction capacity becomes small, and the gain band width is greatly improved. |
