| 摘要 |
PURPOSE:To reduce leaking currents even at shallow junction and to obtain excellent moisture resistance by selectively adding different impurites in a polycrystal Si layer under a metallic wiring layer. CONSTITUTION:The P type diffused layer 8 is obtained on an N type Si substrate. An N type diffused layer 10 is formed in a well 3, and an N channel MOSFET is obtained. Then a contact hole is provided on an interlayer insulating film 11, and a polycrystal layer 13, on the entire surface of which B is added, is grown. Thereafter, an Si oxide film 14 is provided so as to cover the P type MOSFET, and P diffusion is performed. Then the polycrystal Si layer is readily transformed into an N type 15. Then, the insulating layer is removed from the entire surface, Al 16 is evaporated, and selective patterning is performed. In this way, the P type MOSFET is constituted by the wiring layer of the polycrystal Si layer including Al and P type impurities, and the N type MOSFET is constituted by the polycrystal Si layer including Al and N type impurities. Therefore no trouble occurs at the connecting part of the source and drain parts. |
