| 摘要 |
PURPOSE:To form gate electrodes highly densely without forming overlapping by performing dry etching so that the convex part of a poly Si film which is to become the second electrode gate is etched faster than the concave part. CONSTITUTION:A first gate insulating film 12 is uniformly grown on a semiconductor substrate 1. Thereafter the first gate electrode 13 is formed. Then the part of the film 12 other than the part directly beneath the electrode 13 is removed, and a second insulating film 14 is grown. Thereafter a poly Si film 15' which is to become the second gate electrode is deposited on the entire surface. Then the dry etching is performed on the film 15'. In this case, the convex part of the film 15' is etched faster than the concave part. Finally, the convex part is removed and the concave part remains and becomes the second gate electrode 15. As a result, the electrode 13 and 15 are not overlapped and are arranged approximately on the same plane. Therefore, wires are not broken even though a wiring layer is formed thereon, and the electrostatic capacity between the gate electrodes is not increased. |
