| 摘要 |
Alpha-particle induced errors in integrated circuits, especially those used for memory storage, are reduced by subjecting the partially completed, or fully completed, integrated circuits to neutron irradiation. This irradiation creates "traps" in the single crystalline semiconductor substrates of the integrated circuits for any unwanted charged particles that are produced by alpha particle radiation. Consequently, such unwanted charged particles do not disrupt the integrity of any data stored in the circuit. In one embodiment, the neutron irradiation is applied during wafer fabrication and, in a second embodiment, the irradiation is applied after wafer fabrication but before packaging of the circuit, and in the third embodiment the irradiation is applied after a completion of the packaging step of the integrated circuits.
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