| 发明名称 |
Doped polysilicon silicide semiconductor integrated circuit interconnections |
| 摘要 |
An improved interconnection for semiconductor integrated circuits is provided by a member made of doped polycrystalline silicon and metal silicide that provides the simultaneous advantages of high conductivity and reduced overlap capacitance in multilayer integrated circuit devices. Such interconnecting members are useable to produce field effect transistor type devices. |
| 申请公布号 |
US4329706(A) |
申请公布日期 |
1982.05.11 |
| 申请号 |
US19790016647 |
申请日期 |
1979.03.01 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CROWDER, BILLY L.;REISMAN, ARNOLD |
| 分类号 |
H01L29/78;H01L21/28;H01L21/3205;H01L21/331;H01L21/336;H01L23/29;H01L23/31;H01L23/52;H01L23/522;H01L23/532;H01L27/108;H01L29/43;H01L29/49;H01L29/73;(IPC1-7):H01L29/04;H01L23/48;H01L29/46 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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