发明名称 |
Channelled substrate double heterostructure lasers |
摘要 |
In a fabricating a III-V compound, for example, GaAs, having a layered structure a first layer is grown on a planar substrate by a vapor deposition process adapted to produce differential growth while a subsequent layer is grown by a deposition process which restores planarity. In this way a uniformly thick combination layer is produced with a non-planar junction between its composite layers. Particularly in the fabrication of channelled substrate double heterostructure lasers, a channelled blocking layer is grown by organo-metallic pyrolysis (OMP) and a subsequent confining layer is grown using liquid phase epitaxy (LPE). The OMP process produces a channel with flanking shoulder portions which permit LPE growth of a very thin confining layer immediately above the shoulder portions thereby improving linearity of the device.
|
申请公布号 |
US4329189(A) |
申请公布日期 |
1982.05.11 |
申请号 |
US19810282863 |
申请日期 |
1981.07.13 |
申请人 |
NORTHERN TELECOM LIMITED |
发明人 |
NOAD, JULIAN P.;SPRINGTHORPE, ANTHONY J.;LOOK, CHRISTOPHER M. |
分类号 |
H01L21/20;H01L33/00;H01L33/24;H01S5/223;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|