| 摘要 |
A method of depositing X-ray absorber patterns on a mask membrane to achieve minimum pattern feature dimensions less than 1 mu m. The membrane is covered with an ultraviolet (VU) sensitive photoresist which carries a thin metallic film. The metallic film is coated with an electron beam resist. The electron beam resist is exposed to the desired pattern by an electron beam. After development, the metal film is etched through the remaining electron beam resist. This forms a stencil overlying the lower UV photoresist layer which is then exposed by an ultraviolet or soft X-ray source. After development, an X-ray absorber, such as gold, is deposited on the membrane. The final exposure step may be done by means of a point source of radiation. The X-ray absorbers will then have sloping walls to prevent shadowing of the X-ray source.
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