| 摘要 |
PURPOSE:To manufacture high dielectric-resistant devices of small mechanical stres with the high yeild by a construction wherein ZnO-B2O3-SiO2 ternay composition glass within a given composition range is filled in and coated on grooves formed to expose a p<+>n junction end part and an n<+>-channel stopping region. CONSTITUTION:Grooves 51 are formed on one main plane of a gate turn-off thyristor, for example, so as to expose a p-base region 12, n-base region 11 and a channel stopping region 14 to the inside of each groove. A glass layer 21 is provided on the inner surface of the groove 51. As a material of this glass layer there is used ternay composition glass which contains ZnO of 67-58wt%, B2O3 (wherein a total amount of ZnO and B2O3 shall be above 86wt%), and the rest of SiO2. By so doing, it becomes possible to control an NFB value within a range of (-3--9)X10<11>cm<-2> and the coefficient of heat expansion within a range of (25-30)X10<-7>. Thus, the device of moat structure can be increased in its dielectric-resistace and it becomes possible to prevent a curvature or failure of the glass film due to heat expansion. |
