| 摘要 |
In a charge transfer device in which a plurality of electrodes are located on an insulating layer formed on a semiconductor substrate and an input portion and a transfer portion are provided, a predetermined amount of charge determined by a potential applied to the input portion is introduced into the portion beneath a predetermined electrode while driving an electrode on the transfer portion, such a potential is applied to all of the plurality of electrodes that surface areas of the substrate beneath the electrodes each become an accumulation state to thereby inject the predetermined amount of charge into the substrate, and a potential is applied to the electrodes after a predetermined period of time to partially catch injected charge beneath the electrodes and to use caught charge as a bias charge. A solid state image pick-up apparatus is also disclosed which includes the above-mentioned charge transfer device and carries out their operation in the vertical blanking period. |
