| 摘要 |
PURPOSE:To provide zero bolt switching function with a single unit in a thyristor of the four-layer structure exposed with the P-N junctions of an N type base, a P type base and an N type emitter on the surface of a substrate by forming a P type layer extending from the surface into the N type base and connecting it to the N type emitter via an insulating film. CONSTITUTION:An N type base layer 2 is diffused in a P type Si substrate 1 to become an emitter layer, a P type base layer 3 is formed therein, and an N type emitter layer 11 is formed therein to form a thyristor exposed with a P-N junction on the main surface. A P type base layer 4 extending from the surface into the layer 2 newly added is diffused, an insulating film 5 is covered on the overall surface, holes are opened corresponding to the layers 4, 11, and the layers 4, 11 are connected via aluminum electrode metal 6. In this manner, a thyristor having high sensitivity, high du/dt withstand value and zero volt switching function can be provided as a single unit. |
