| 摘要 |
PURPOSE:To eliminate the influence of stress strain and to form a diffusion layer of Ga and so on by a method wherein an Si3N4 film is attached onto an SiO2 film in which an opening is provided, and a window is made in the specified region in the opening to inject impurity ions, before being annealed using laser beams. CONSTITUTION:For instance, a CVD oxidized film 25 is formed on the surface of a substrate 21 and an opening is made in a specified region and then a nitrified film 22 is attached onto the whole surface. Next the nitrified film 22 on the opening is photo-etched to provide a window 23. Impurities 26 of, for instance, Ga or Zn which make it difficult to allow the oxidized film 25 to become a mask are injected into the window through the ion-injection method. Subsequently, laser beams such as those of YAG laser are sent out to the ion injected layer 24 to make active the injected ions. By so doing, the crystalline deterioration of the substrate due to abnormal diffusion and an interfacial strain can be prevented during the process of introducing impurities with a greater diffusion coefficient in the oxidized layer, while reproducibility and yield can be improved. |
