发明名称 |
Depositing silicon on carbon strip - by drawing strip through liq. silicon, used in solar cell mfr. |
摘要 |
<p>Method for depositing Si on a strip of carbon, opt-coated with pyrolytic carbon, comprises drawing the strips through a container contg. liq. Si and fed from a slot in its base. Specifically, the strip is first pierced with a number of holes of dia. of about 1mm. The Si coated C is used in mfr. of solar cells. The solar cells formed from the Si coated C strip have higher power yield than in prior art with efficiencies exceeding 11%. The pyrolytic C deposit prevents diffusion of C from the base C strips into the Si layer. The holes reduce development in the substrate of thermal stresses during cooling.</p> |
申请公布号 |
FR2493350(A1) |
申请公布日期 |
1982.05.07 |
申请号 |
FR19800023469 |
申请日期 |
1980.11.03 |
申请人 |
LABO ELECTRONIQUE PHYSIQUE APPLI |
发明人 |
CHRISTIAN BELOUET |
分类号 |
C30B15/00;(IPC1-7):30B15/00;01L31/18 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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