发明名称 Depositing silicon on carbon strip - by drawing strip through liq. silicon, used in solar cell mfr.
摘要 <p>Method for depositing Si on a strip of carbon, opt-coated with pyrolytic carbon, comprises drawing the strips through a container contg. liq. Si and fed from a slot in its base. Specifically, the strip is first pierced with a number of holes of dia. of about 1mm. The Si coated C is used in mfr. of solar cells. The solar cells formed from the Si coated C strip have higher power yield than in prior art with efficiencies exceeding 11%. The pyrolytic C deposit prevents diffusion of C from the base C strips into the Si layer. The holes reduce development in the substrate of thermal stresses during cooling.</p>
申请公布号 FR2493350(A1) 申请公布日期 1982.05.07
申请号 FR19800023469 申请日期 1980.11.03
申请人 LABO ELECTRONIQUE PHYSIQUE APPLI 发明人 CHRISTIAN BELOUET
分类号 C30B15/00;(IPC1-7):30B15/00;01L31/18 主分类号 C30B15/00
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