发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PURPOSE:To make the response time and the current consumption constant approximately independently of a temperature, by providing a circuit which compensates the current reduction due to the rise of the temperature. CONSTITUTION:Respective dimensions of MOS transistors TRs 1, 2, and 3 in inverters INV1, INV2, and INV3 and respective dimensions of MOS TRs 4, 5, and 6 are so set that the load capacity such as an inverter in the next stage is discharged sufficiently. Gate voltages of MOS TRs 7, 8, and 9 are changed in accordance with the temperature to eliminate the reduction of the current at a high temperature, thereby preventing the increment of the response time. Consequently, the response time in this circuit is constant approximately independently of the temperature. Though gate voltages of MOS TRs 7, 8, and 9 are increased in accordance with the temperature, the current consumption is constant approximately because a current is reduced in accordance with the rise of a temperature essentially.</p>
申请公布号 JPS5772429(A) 申请公布日期 1982.05.06
申请号 JP19800147922 申请日期 1980.10.22
申请人 TOKYO SHIBAURA DENKI KK 发明人 IWAHASHI HIROSHI;ASANO MASAMICHI
分类号 H01L27/092;E05F15/632;E05F15/70;G05D23/20;H01L21/8238;H01L27/02;H01L29/78;H03K5/00;H03K5/13;H03K17/14;H03K17/687;H03K19/003;H03K19/017;H03K19/0944;H03K19/0948 主分类号 H01L27/092
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