| 摘要 |
PURPOSE:To shorten a concave section of a gate region to a minute gate region by conducting the coating of a protective film and removal through etching having anisotropy in succession to a photo-etching process. CONSTITUTION:An active layer 42 on a semiconductor substrate 41 is coated with the protective film 43. An opening as the gate region with l1 gate length is formed to the protective film 43 through photo-etching. The protective film 44 is coated. The protective film 44 goes round and is coated even on a side wall of the opening section of the gate region at that time. When the protective film 44 is removed through the etching method having strong anisotropy at that time, the protective film 44 section coated on the side wall of the opening of the gate region is left, thus resulting in l2 gate length of the gate region opened. Accordingly, the gate length can be shortened accurately. |
