| 摘要 |
PURPOSE:To shorten dimensions required as the semiconductor device largely by decreasing the positioning processes with eyes of a photo-mask. CONSTITUTION:An oxide film 2 and a nitride film 3 are formed onto a P type silicon substrate 1. A photo-resist is applied onto the nitride film 3, a mask is contacted, and a section corresponding to a section except an electrode forming section 5 is removed. A thermally oxidized SiO2 film 4 is shaped as an isolation film. A silicon film 6 is formed through a CVD method, and a polycrystal silicon film 6a is shaped onto the oxide film 4 and a single crystal silicon film 6c onto the electrode forming section 5. An oxide film 7 and a silicon film 8 are molded onto the silicon film 6, and a gate electrode 8 is formed. The polycrystal silicon film connected to a source region 9 and a drain region 10 is removed selectively, electrodes 9a, 10a are shaped, and a protective film 11 and a contact hole 12 are molded. |
