发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To prevent phosphor-silicate glass from cracking by a method wherein a ground or power supply wiring is divided into two or more wirings which are smaller than a wiring width determined by the amount of current flowing through the wiring. CONSTITUTION:A metallic wiring for grounding or power supply of an element is formed on a semiconductor substrate 7. At this case a wiring with a large current capacity is divided into small-width wirings 8. With this structure, even phosphor- silicate glass 5 with 1mum or larger wide is grown on metallic wirings, the stress developed between grains is small compared with that on a large-width wiring so that any crack is not created.
申请公布号 JPS5772349(A) 申请公布日期 1982.05.06
申请号 JP19800148770 申请日期 1980.10.23
申请人 NIPPON DENKI KK 发明人 OZAWA MASAHIDE
分类号 H01L29/78;H01L21/3205;H01L23/52;H01L23/528;H01L29/41 主分类号 H01L29/78
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