| 摘要 |
PURPOSE:To change resistance value, and to set the gate delay time of an MOS type transistor accurately by forming a plurality of openings to an insulating film of an upper surface of a resistor having resistance value higher than the optimum resistance value and altering a mask pattern for a conductor. CONSTITUTION:The insulating film is silicon dioxide, etc. to which the openings 26-32 are shaped is molded onto an upper surface of a gate 21 made of the resistor in polycrystal silicon, etc. The conductor 33 in aluminum, etc. is formed onto the upper surface so as to cover the openings 26-28. Accordingly, signals effectively applied to the gate 21 are signals that resistance value between the openings 28 and 32 is added to signals inputted to the conductor 33. Here, since capacity value is constant, the delay time can be decided only by optionally selecting the opening conducted according to the mask pattern for the conductor and determining effective resistance value. |
