| 摘要 |
PURPOSE:To improve the incident efficiency of light to the light receiving element by forming the light receiving element onto an element shaped to a semiconductor layer so as to cover the element. CONSTITUTION:An NPN type transistor is composed in such a manner that a P type base regon 5, and N<+> type emitter region 6 and an N<+> type ohmic contact region 7 for extracting a collector electrode are diffused and formed. A photodiode 8 as a photocell is shaped to an upper section of the transistor so as to cover the transistor. When the photocell is formed in this manner, light can be projected efficiently into a silicon layer 15 from the surface side. |
