发明名称 DRIVING STAGE FOR STATIC MOS DIGITAL CIRCUIT
摘要 Known MOS drivers have two MOS FETs, lying in series with respect to their source-drain junctions and with their free, current-carrying terminals each at one of the two supply potentials (Vcc, M), the gate of the earthed, normally off second MOS FET (T2) is signal-controlled, whereas the gate of the first MOS FET (T1) is connected to the output (A) of the driver lying by way of a switching point between the two MOS FETs (T1, T2) (Fig. 1). Although this connection requires little circuitry, one of the desirable requirements would be for shorter switching times of the digital semiconductor circuits controlled by it. It is therefore the object of the invention to improve the known driver circuit in this respect. Therefore, according to the invention, the driver just defined is designed in such a way that the coupling of the gate of the first MOS FET (T1) with the output (A) does not take place directly but via a capacitor (C). In addition, there is a third MOS FET (T3), the source-drain junction of which on the one hand lies at the gate of the first MOS FET (T1) and on the other hand has applied to it a control signal (S2) which is different from the control signal (S1) at the gate of the second MOS FET (T2).
申请公布号 JPS5772427(A) 申请公布日期 1982.05.06
申请号 JP19810129302 申请日期 1981.08.18
申请人 SIEMENS SCHUCKERTWERKE AG 发明人 BURUKUHARUTO GIIBERU
分类号 H03K19/094;G11C11/413;H03K17/06 主分类号 H03K19/094
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