| 摘要 |
PURPOSE:To relax field concentration between both the first gate region and a drain region and near the regions, and to improve voltage resisting property by forming structure which separates the first gate region from the drain region. CONSTITUTION:A P<+> type source region 2 and the drain region 3 are shaped to an N type semiconductor 1, and the N type gate region 5 is formed into a P type channel region 4, one part thereof is exposed to the surface side, at a predetermined interval from the drain region 3 between both regions. The gate region 5 functions as the first gate, and overlaps on the source region 2, bus is separated from the drain region 3. According to such constitution, the field concentration between both the first gate region 5 and the drain region and near the regions can be relaxed. |
