Method of manufacturing a FET device disposed in a compound s/c layer on a semi-insulating substrate

摘要

A method of manufacturing a field effect transistor uses a semiinsulating substrate consisting of a compound semiconductor, and an N type semiconductor layer formed on the substrate. The method comprises the steps of implanting ions of a P type impurity from the main surface of said semiconductor layer to form at least two P type gate regions which extend from the main surface to substantially reach said substrate and are disposed with a predetermined interval, and sintering metallic layers on the gate regions in ohmic contact and on opposite sides of the semiconductor layers with said semiconductor gate regions being interposed therebetween to form a gate, a source and a drain electrodes. Said implantation step further comprises a step of positioning at least two of said gate regions such that said gate regions come in contact with the boundary region of the transistor to be constructed. The method of manufacturing the field effect transistor is useful for fabricating the field effect transistor at a high yield which is suitable to assemble an integrated circuit.