发明名称 Method of forming semiconducting materials and barriers
摘要 In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave and cylindrical configurations are used to produce a spacially varying electric field. Twin electrodes are used to enable the use of an AC power supply and collect a substantial part of the coating on the substrate. Solid semiconductor material is evaporated and sputtered into the glow discharge to control the discharge and improve the coating. Schottky barrier and solar cell structures are fabricated from the semiconductor coating. Activated nitrogen species is used to increase the barrier height of Schottky barriers.
申请公布号 US4328258(A) 申请公布日期 1982.05.04
申请号 US19790088100 申请日期 1979.10.24
申请人 PLASMA PHYSICS CORP. 发明人 COLEMAN, JOHN H.
分类号 C23C16/503;C23C16/509;H01J37/32;(IPC1-7):C23C11/00 主分类号 C23C16/503
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