| 发明名称 |
Electron beam annealing of metal step coverage |
| 摘要 |
Defects in the metal step coverage of a thin film semiconductor device are removed by annealing the metal layer with a pulsed electron beam.
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| 申请公布号 |
US4327477(A) |
申请公布日期 |
1982.05.04 |
| 申请号 |
US19800169559 |
申请日期 |
1980.07.17 |
| 申请人 |
HUGHES AIRCRAFT CO. |
发明人 |
YARON, GIORA;HARARI, ELIYAHOU;HESS, LAVERNE D.;MA, YUEH Y. |
| 分类号 |
H01L21/263;H01L21/268;H01L21/321;(IPC1-7):H01L21/26;H01L21/26;B05D3/06 |
主分类号 |
H01L21/263 |
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