| 摘要 |
1,098,339. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Nov. 23, 1966 [Dec. 4, 1965], No. 52425/66. Addition to 1,035,089. Heading H1K. The masking method of Specification 1,035,089 (in which narrow apertures are formed in a masking coating by cracks produced by differential thermal expansion) is applied to the manufacture of semi-conductor components in which impurity-doped regions are required to be separated by narrow undoped regions. Such components are manufactured by incorporating a suitable dopant in the coating and subsequently diffusing this dopant into the underlying semi-conductor. The undoped areas beneath the cracks in the coating may subsequently be doped by diffusion through the cracks, or have more semi-conductor material or an electrode material applied to them by deposition through the cracks. The drawings (not shown) depict the use of this technique to produce: a lateral transistor consisting of two side-by-side N-doped areas separated by a narrow gap in a P-type semiconductor body; an insulated gate field effect transistor; and a PN uni-junction transistor. The applicability of the invention to integrated circuits is also mentioned. The described embodiments are of gallium arsenide doped with zinc or tin by diffusion from a cracked masking coating of silicon dioxide. The coating is formed by thermal dissociation of specified organic compounds of silicon and the doping substance. The doped oxide is deposited from the vapour phase to a thickness of 5000 or more A and subsequently cracked by the technique described in the parent Specification, the coating being mechanically grooved at the sites where cracking is required before heating to produce the cracks. |
