| 摘要 |
PURPOSE:To avoid unnecessary restriction received from a substrate and to obtain high function by a method wherein the first group functional element is formed at the first substrate suitable for the first group functional element and the second group functional element is simuilarly provided at the second substrate suitable for the second group functional element and these substrates are oppositely arranged to connect op posing electrodes provided at each substrate to each substrate through bumps. CONSTITUTION:An MOS transistor is made at a P type Si substrate 1 and a memory capacitor is made at a substrate 31 consisting of transparent ceramics or sapphires and th like and these functional element surfaces are oppositely arranged and connected by using alloy bumps of metals 25 and 38 provided at each functional element surface. Namely, an MOS transistor gate electrode 7 is provided at the Si substrate 1 through a gate oxide film 6 and N<+> type source and drain regions 8 and 12 are diffused and formed at both sides of the gate electrode 7 to mount electrodes 20 and 21 at the N<+> type source and drain regions 8 and 12 respectively. Meanshile, a Ta film 32 and a dielectric film layer 33 are deposited on a substrate 31 such as transparent ce ramics facing to the electrodes 20 and 21 to provide a capacitor facing electrode 34 and the electrodes 34 and 21 are connected by alloy layers of bump electrodes 25 and 38. |
