| 摘要 |
PURPOSE:To reduce the occupied area of capacitor and to contrive high integration by a method wherein an oxide film is formed on a metal pattern provided on a semiconductor layer in a device manufacturing a compound element on a common substrate and a metal layer is provided at the upper part to compose a capacitor element. CONSTITUTION:An Al anodic oxidation film is used as a dielectric layer for the capacitor element of a linear IC, for example, including bipolar and MOS transistors. For example, an Al pattern 3 is formed on a thick oxide film 2 formed an N type substrate 1 by the first layer Al electrode formation process and an Al2O3 film 4 is formed at about 700Angstrom , for example, by applying anodic oxidation on the surface of the Al pattern 3. Next, an Al layer 6 is formed by opening a hole in a layer film 5 by a predetermined area on the Al2O3 film 4 by a process forming the layer insulation layer 5 and providing the second layer Al and a capacitor element composing the Al layers 3, 6 as electrodes is made. In this way, an element remarkably increased a capacitance value with the same area can be manufactured and integration can be improved. |
