| 摘要 |
PURPOSE:To capacitate the formation of device isolating section after diffusion by a method wherein a substrate subjected to the formation of a dopant diffused layer is exposed to an oxygen plasma at low temperature so that anode oxidation may be accomplished and the diffusion layer insulatedly isolated. CONSTITUTION:In manufacturing an MOSFET, after the formation of a gate film 22 and a polycrystalline Si gate 23 on a P type substrate 21, an As diffusion layer 24 is formed by ion injection. Next, by the CVD method, and Al2O3 film approximately 3,000Angstrom thick is formed and a mask layer Al2O3 film 25 is patterned in the region where a device is built. This wafer C is the placed on an electrode 9 situated in a quartz tube 6, for anode oxidation to be made in a 300-400 deg.C hot oxygen plasma. The resultant oxide film 26 should be about 8,000Angstrom thick. Next, the Al2O3 film 25 is provided with an aperture in which an Al electrode is tempertures thus enables an isolating process to be accomplished after diffusion. In a process involving a bipolar transistor, too, a device can be isolated after anode oxidation following base diffusion. |
