发明名称 MANUFACTURE OF SILICON FILM
摘要 PURPOSE:To prevent explosion of dilution-purpose H2 in the event of gas leakage by utilizing the gas adding monosilane 1% or more to phosphate or diborane. CONSTITUTION:Monosilane gas easily catches fire naturally when even a very slight amount of the gas makes contact with the air and the monosilane of 1% which is diluted with Ar causes a spark in the dark place. Therefore, when PH3, B2H6 of H base including monosilane may be leaked out, the monosilane instantaneously facilitates burning of H2 as an ignition source. The H2 burns at a leakage port, but causes no explosion. According to the above constitution, it is desirable that an Si film is growed on a substrate through glow discharge by utilizing monosilane, phosphine and diborane diluted with H2 respectively.
申请公布号 JPS5771128(A) 申请公布日期 1982.05.01
申请号 JP19800147446 申请日期 1980.10.21
申请人 SUWA SEIKOSHA KK 发明人 OOTAKE TSUTOMU
分类号 C23C16/44;H01L21/205;(IPC1-7):01L21/205 主分类号 C23C16/44
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