| 摘要 |
PURPOSE:To permit gain control suitable for IC orientation by a method wherein a resistor consisting of a base diffusion layer is provided and connected between both emitters of signal input differential paired transistors and a diffusion layer and electrodes controlling a depletion layer in a resistor region are provided. CONSTITUTION:A pinch resistor 4 permitting the control of a resistance value is connected between the emitters of transistors (TR) 11, 12 in a double bound mixer consisting of TRs 11, 12, 16-19. The resistor 4 forms a base diffusion layer 4 at an N type epitaxial layer 2 on a P type substrate 1 and after forming an N type emitter diffusion layer 5 in the base layer 4, an IC is made by providing the base layer 4 with resistor terminal electrodes 7, 8 and the emitter layer 5 with a resistor control electrode 9. The expansion of a depletion layer in the base layer 4 varies and the resistance value between terminals 7, 8 can be controlled by maintaining an electrode 10 provided at the epitaxial layer 2 at the highest electric potential and by controlling the electric potential of the electrode 9 at a high range than the electric potential of the emitters of the TRs 11, 12. In this way, frequency conversion gain can be controlled maintaining mixer characteristics. |
