| 摘要 |
PURPOSE:T obtain P-i-N type cell, of small electric resistance, by constituting most of poly-crystal and a part of amorphous layer in a P type layer, as for a solar cell which consists of a P type semiconductor layer and an i type amorphous semiconductor layer, accumulated subsequently on a substrate, and an N type amorphous semiconductor layer. CONSTITUTION:An N type layer 2 and an i type layer 3, composed of amorphous layer, and a P type layer 4 are accumulated on a metal substrate 1 of stainless steel or the like. A P type polycrystalline layer 5 is accumulated thereon. A transparent electrode 6 of In-Sn composite is accumulated thereon. An Al metal electrode 7 is attached to an end thereon. In this constitution, the layers 2-4 are formed subsequently by glow discharge or the like. THe layer 5 is formed temporarily as a P type amosphous layer, and mostly converted into poly-crystal, while partly remaining as unification with the P type amorphous layer 4, by applying a laser beam. This allows poly-crystallization so as to decrease the electric resistace as well as reduce absorption coefficient, thereby to make it possible to increase the thickness correspondingly and further lowes the resistance. |
