| 摘要 |
PURPOSE:To attain to equalize a thickness of a vapor deposition film by constitution so as to mutually intercross a locus of a substance to be evaporated accompanying rotation and revolution of a support dish of the substance to be evaporated. CONSTITUTION:To an inner surface of water support dishes 1, 1' forming a part of a spherical surface, plural semiconductive wafers are fixed. A revolution shaft 4 is supported in a freely rotatable manner by a gear box 5 and one end 4a thereof is engaged with a crank shaft like part of a drive source. the gear box 5 comprises gearing a stationary main gear 6 and plural rotatable and revolvable auxiliary gears 7 and each gears 7 are connected to each end parts of rotation shafts 3, 3'. Further, a space between the shaft 4 and shafts 3, 3' is connected by a connecting arm 8 and a protruded part 11 and an evaporation source 10 is provided to a lower part. In this case, a ratio N1/N2 of a tooth number N1 of the main gear 6 and a tooth number n2 of the auxiliary gear 11 is selected to such a value that a special position of a point of the support dishes 1, 1' is returned to an initial condition by three revolutions or more, for example, the ratio N1/N2 is selected to 7/3, 7/4. |
