| 摘要 |
<p>PURPOSE:To facilitate formation of wiring layers of a semiconductor light emitting device by a method wherein an insulating film having openings is provided on a semiconductor single crystal substrate, and molecular beam evaporations are performed to provide light emitting junctions consisting of single crystal at the openings and a high resistance polycrystalline layer on the insulating film. CONSTITUTION:An SiO2 mask 3 is provided on an N type GaP single crystal substrate 1 and openings are formed, then molecular beam evaporations of N type GaP and P type GaP doped with nitrogen are performed in order to form N type GaP layers 4, P type GaP layers 5 having P-N junctions 6 at the opening parts and a high resistance polycrystalline layer 7 on the insulating film 3, and wirings 10 are formed utilizing the polycrystalline layer 7 thereof. Accordingly because the surface to be formed with wirings becomes to nearly flat, formation of wiring layers is facilitated.</p> |
