发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To shorten a test time, by simultaneously selecting plural optional blocks divided into plural blocks, and writing to the respective blocks. CONSTITUTION:A memory array 11 is divided into blocks 111-114. Outputs of the blocks 111-114 are connected to writing circuits 71-74, and are connected in common to an outputting circuit 9 through transmission gates 81-84. The writing circuits 71-74 are controlled by outputs WS1-WS4 of a selecting/non-selecting circuit 31, and an output DIN of an inputting circuit 32. A multiwrite switching circuit 33 sends signals MW1 (MW2) and their reverse signals to an address buffer 23 and 24, respectively, by which a multiwrite state is obtained.</p>
申请公布号 JPS5769585(A) 申请公布日期 1982.04.28
申请号 JP19800143949 申请日期 1980.10.15
申请人 TOKYO SHIBAURA DENKI KK 发明人 ASANO MASAMICHI;IWAHASHI HIROSHI
分类号 G11C29/00;G11C16/02;G11C16/10;G11C16/12;G11C16/32;G11C17/00;G11C29/34 主分类号 G11C29/00
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